MIMMG200D120B6TN 1200v 20 0a igbt module r oh s c om plia nt fea t ures high s hort circuit cap a b i lit y , self lim i ting s hort circuit curr ent igb t 3 chip(t rench+fi e l d s t op techno l o g y ) v c e ( sat ) w i th positive temperature coef fic i e n t f a s t s w i tch i ng a n d short t a il current f ree w hee l i ng d i o d es w i th fast and sof t reverse recov e r y l o w s w itc h i ng loss es applica t ions high f r e que n c y s w i t c h i ng a pplic a t i o n medic a l a p plicati ons motion/serv o control ups s y stems absolut e maximum ra tings t c = 25c unless oth e rwise s p ecified t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s coll ector - emitter v o l t age t v j v 0 0 2 1 c 5 2 = v ges gate - emitter v o lt age 20 v t c = 25 c 290 a i c dc col l ector c u rrent t c a 0 0 2 c 0 8 = i c m rep e ti ti ve peak collect o r cur rent t p a 0 0 4 s m 1 = p tot w 0 5 0 1 t b g i r e p n o i t a p i s s i d r e w o p diode v rrm rep e titive rev e rse v o l t a g e t v j v 0 0 2 1 c 5 2 = t c a 0 9 2 c 5 2 = i f( a v ) a vera ge fo r w a rd curre nt t c a 0 0 2 c 0 8 = i frm rep e ti tive peak fo r w a r d curr ent t p a 0 0 4 s m 1 = i 2 t t v j =125c, t= 10ms, v r = 0v 775 0 a 2 s gd series module
mimmg200d120b6 t n e lectr ical and t h e r mal charac t eristics t c = 25c unless oth e rwise s p ecified sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v g e (th) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 8 ma 5.0 5.8 6.5 v i c = 200a, v g e =15v , t v j = 25c 1.7 v v c e ( sat ) collector - emitter saturatio n v o l t age i c = 200a, v g e =15v , t v j = 125 c 1 . 9 v v c e = 1200 v , v g e = 0 v , t v j = 25c 1 ma i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t v j = 125 c 5 ma i ges gate leak age current v c e = 0 v , v g e 15v , t v j = 125c -400 400 na r gint 8 . 3 r o t s i s e r e t a g d e t a r g e t n i ? q ge gate charge v c e = 600v , i c = 200a , v g e = 15v 1 . 9 c c i e s f n 4 1 e c n a t i c a p a c t u p n i c res revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 5 n f t v j =25c 160 ns t d(on) t u rn - on delay t i me t v j =125c 170 n s t v j =25 c 40 n s t r rise t i me v c c = 600 v , i c = 200a, r g =3.6 , v g e = 15v , inductive l o ad t v j =125c 45 ns t v j =25c 450 ns t d(off) t u rn - o f f delay t i me t v j =125c 520 n s t v j =25 c 100 n s t f fall t i me v c c = 600 v , i c = 200a, r g =3.6 , v g e = 15v , inductive l o ad t v j =125c 160 ns t v j =25c 10 mj e on t u rn - on energ y t v j =125c 15 mj t v j =25c 16.5 mj e off t u rn - of f energ y v c c = 600 v , i c = 200a, r g =3.6 , v g e = 15v , inductive l o ad t v j =125c 25 mj i s c short circu it current t p s c 10s , v g e = 15v t v j = 125c,v c c = 900v 800 a r thj c junctio n -to-ca se t hermal r e sist ance per igbt 0.12 k /w diode i f = 200a , v g e =0v , t v j =25c 1.65 v v f f o r w ard v olt age i f = 200a , v g e =0v , t v j =125c 1.65 v i rrm a 0 9 1 t n e r r u c y r e v o c e r e s r e v e r . x a m q r r c 6 3 e g r a h c y r e v o c e r e s r e v e r e r e c revers e recove r y e nergy i f = 200a , v r = 600v d i f /d t= -400 0a/ s t v j = 125c 17 mj r thj c d junctio n -to-ca se t hermal r e sist ance pe r diode 0.20 k /w
mimmg200d120b6 t n module charac t eristics t c = 25 c unless oth e rwise s p ecifie d sy mbol pa rame ter t est condit i o n s min. t y p. max. unit t v j max c 0 5 1 e r u t a r e p m e t n o i t c n u j . x a m t v j o p c 5 2 1 0 4 - e r u t a r e p m e t g n i t a r e p o t s t g c 5 2 1 0 4 - e r u t a r e p m e t e g a r o t s v i so l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i 0 5 3 x e d n i g n i k c a r t e v i t a r a p m o c i t c t o rque modu le-to-si n k recomme n d e d m6 3 5 n m t o rque modu le electro des recomme n d e d m6 2 . 5 5 n m g 0 2 3 t h g i e w i c (a) v c e v f i gure 1 . t y pic a l output chara cteristics t v j =125c t v j =25c 400 320 160 80 0 0 0.5 1.0 1.5 2.0 2.5 100 v c e v f i gure 2 . t y pic a l output chara cteristics 4.0 3.5 3.0 2.5 1.5 1.0 0.5 0 i c (a) v g e v f i gure 3 . t y pic a l t ransfe r char a cte ri sti cs 0 2 0 0 0 4 8 20 e on e off ( mj ) e o n e o f f r g f i gure 4 . s w itc h i n g ener g y vs. gate resistor v ce = 600v i c =200 a v g e = 15v t v j =125c t v j =125c 2.0 4 .5 5.0 v g e =15v 80 i c (a) 160 400 t v j =125c t v j =25c v c e =20v 1 2 10 9 7 6 5 8 3.0 1 1 240 240 400 320 160 8 0 0 240 320 1 2 1 6 28 3 6 24 6 0 4 0 3 2 8 0
mimmg200d120b6 t n 0 5 0 100 300 450 0 50 i c a f i gure 5 . s w itc h in g ener g y vs . collector c u rr ent v ce =600v r g = 3 . 6 v g e = 15v t v j =125c 400 100 0 200 400 600 800 100 0 120 0 v c e v f i gure 6 . reve r se biase d sa fe opera ting are a 140 0 e o f f e o n 0 10 20 60 e on e off ( mj ) r g = 3 . 6 ? v g e =15v t v j =125c i c (a) e r e c ( mj ) r g f i gure 8 . s w itc h in g en erg y vs . gate resistor v f v f i gure 7 . diode fo r w a r d c h a r acteristics 0.6 0 8 . 1 2 . 1 0 0 80 240 400 160 i f ( a ) t v j =25 c t v j =125c 8 4 0 2 4 2.4 i f =200 a v ce = 600v t v j =125c 150 40 150 320 2 0 4 8 1 6 24 1 2 3 2 3 6 28 200 350 200 250 e rec ( mj ) 8 4 0 50 i f (a) f i gure 9 . s w itc h in g ener g y vs . fo r w ard c u rr ent 100 0 rect a n gul ar pulse d u ratio n (secon ds) f i gure 10. t ransient t hermal imped ance z thj c ( k/w ) 0 . 001 0 . 0 1 0 . 1 1 1 0 0.001 0.1 1 r g = 3 . 6 ? v ce = 600v t v j =125c 400 diod e igb t 150 20 24 200 250 30 20 300 250 50 400 350 300 350 16 12 1 6 1 2 0.01
mimmg200d120b6 t n f i gure 1 1 . c i rcu i t d i agr a m 93.0 28.0 28.0 16.0 20.0 108.0 m6 30.0 30.5 8.5 62.0 48.0 6.0 6.0 2 .8 x 0 .5 1 2 3 4 5 6 7 15.0 22.0 6.0 1 8 6.5 dimen s ions (mm) f i gure 12. pack age outli ne
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